2004-03-05 page 1 hitfet ii.generation bsp 78 smart lowside power switch product summary drain source voltage v ds 42 v on-state resistance r ds ( on ) 50 m nominal load current i d ( nom ) 3 a clamping energy e a s 500 mj features logic level input input protection (esd) thermal shutdown with auto restart overload protection short circuit protection overvoltage protection current limitation analog driving possible vps05163 1 2 3 4 application all kinds of resistive, inductive and capacitive loads in switching or linear applications c compatible power switch for 12 v dc applications replaces electromechanical relays and discrete circuits general description n channel vertical power fet in smart sipmos technology. fully protected by embedded protection functions. gate-driving unit esd overload protection over- temperature protection short circuit protection overvoltage- protection current limitation m v bb in source drain hitfet pin 1 pin 2 and 4 (tab) pin 3 complete product spectrum and additional information http://www.infineon.com/hitfet
2004-03-05 page 2 bsp 78 maximum ratings at t j = 25c, unless otherwise specified parameter symbol value unit drain source voltage v ds 42 v supply voltage for full short circuit protection v bb ( sc ) 42 continuous input voltage 1) v in -0.2 2) ... +10 continuous input current 2) -0.2v v in 10v v in < -0.2v or v in > 10v i in self limited | i in | 2 ma operating temperature t j -40 ...+150 c storage temperature t st g -55 ... +150 power dissipation 5) t c = 85 c p tot 3.8 w unclamped single pulse inductive energy 2) e a s 500 mj load dump protection v loaddump 2)3) = v a + v s v in = 0 and 10 v, t d = 400 ms, r i = 2 , r l = 4.5 , v a = 13.5 v v ld 53.5 v v esd 2 kv 40/150/56 thermal resistance junction - ambient: @ min. footprint @ 6 cm 2 cooling area 4) r thja 125 72 k/w junction-soldering point: r thjs 17 k/w 1 for input voltages beyond these limits i in has to be limited. 2 not subject to production test, specified by design 3 v loaddump is setup without the dut connected to the generator per iso 7637-1 and din 40839 4 device on 50mm*50mm*1.5mm epoxy pcb fr4 with 6cm 2 (one layer, 70m thick) copper area for drain connection. pcb mounted vertical without blown air. 5 not subject to production test, calculated by r thja and r ds(on) e lectro s tatic d ischarge voltage 2) (human body model) according to jedec norm eia/jesd22-a114-b, section 4 jedec humidity category,j-std-20-b iec climatic category; din en 60068-1 msl1
2004-03-05 page 3 bsp 78 electrical characteristics parameter symbol values unit at t j = 25c, unless otherwise specified min. typ. max. characteristics drain source clamp voltage t j = - 40 ...+ 150, i d = 10 ma v ds(az) 42 - 55 v off-state drain current t j = -40...+85 c, v ds = 32 v , v in = 0 v t j = 150 c i dss - - 1.5 5 8 15 a input threshold voltage i d = 1.4 ma, t j = 25 c i d = 1.4 ma, t j = 150 c v in(th) 1.3 0.8 1.7 - 2.2 - v on state input current i in ( on ) - 10 30 a on-state resistance v in = 5 v, i d = 3 a, t j = 25 c v in = 5 v, i d = 3 a, t j = 150 c r ds(on) - - 45 75 60 100 m on-state resistance v in = 10 v, i d = 3 a, t j = 25 c v in = 10 v, i d = 3 a, t j = 150 c r ds(on) - - 35 65 50 90 nominal load current 5) v ds = 0.5 v, t j < 150c, v in = 10 v, t a = 85 c i d(nom) 3 4 - a current limit (active if v ds >2.5 v) 1) v in = 10 v, v ds = 12 v, t m = 200 s i d(lim) 18 24 30 1 device switched on into existing short circuit (see diagram determination of i d(lim) ). if the device is in on condition and a short circuit occurs, these values might be exceeded for max. 50 s. 5 not subject to production test, c alc ulated by r t h ja a nd r ds ( on )
2004-03-05 page 4 bsp 78 electrical characteristics parameter symbol values unit at t j = 25c, unless otherwise specified min. typ. max. dynamic characteristics turn-on time v in to 90% i d : r l = 4.7 , v in = 0 to 10 v, v bb = 12 v t on - 60 100 s turn-off time v in to 10% i d : r l = 4.7 , v in = 10 to 0 v, v bb = 12 v t off - 60 100 slew rate on 70 to 50% v bb : r l = 4.7 , v in = 0 to 10 v, v bb = 12 v -dv ds /dt on - 0.3 1.5 v/s slew rate off 50 to 70% v bb : r l = 4.7 , v in = 10 to 0 v, v bb = 12 v dv ds /dt off - 0.7 1.5 protection functions 1) thermal overload trip temperature t j t 150 175 - c thermal hysteresis 2) t j t - 10 - k input current protection mode t j = 150 c i in(prot) - 130 300 a unclamped single pulse inductive energy 2) i d = 3 a, t j = 25 c, v bb = 12 v e as 500 - - mj inverse diode inverse diode forward voltage i f = 15 a, t m = 250 s, v in = 0 v, t p = 300 s v sd - 1 1.5 v 1 integrated protection functions are designed to prevent ic destruction under fault conditions described in the data sheet. fault conditions are considered as "outside" normal operating range. protection functions are not designed for continuous repetitive operation . 2 not subject to production test, specified by design
2004-03-05 page 5 bsp 78 block diagram inductive and overvoltage output clamp terms hitfet in d v in i d v ds 1 i in s v bb r l 2 3 hitfet v z d s short circuit behaviour input circuit (esd protection) gate drive source/ ground input v in i in i d s t j
2004-03-05 page 6 bsp 78 1 maximum allowable power dissipation p tot = f(t s ) resp. p tot = f(t a ) @ r thja =72 k/w -75 -50 -25 0 25 50 75 100 c 150 t s ; t a 0 1 2 3 4 5 6 7 8 w 10 p tot 6cm2 max. 2 on-state resistance r on = f(t j ); i d =3a; v in =10v -50 -25 0 25 50 75 100 125 c 175 t j 0 10 20 30 40 50 60 70 80 m 100 r ds(on) typ. max. 3 on-state resistance r on = f(t j ); i d = 3a; v in =5v -50 -25 0 25 50 75 100 125 c 175 t j 0 10 20 30 40 50 60 70 80 90 m 110 r ds(on) typ. max. 4 typ. input threshold voltage v in(th) = f(t j ) ; i d = 0.7 ma; v ds = 12v -50 -25 0 25 50 75 100 c 150 t j 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 v 2 v gs(th)
2004-03-05 page 7 bsp 78 5 typ. transfer characteristics i d =f(v in ); v ds =12v; t jstart =25c 0 1 2 3 4 5 6 7 8 v 10 v in 0 5 10 15 20 a 30 i d 6 typ. short circuit current i d(lim) = f(t j ); v ds =12v parameter: v in -50 -25 0 25 50 75 100 125 c 175 t j 0 5 10 15 20 a 30 i d 5v vin=10v 7 typ. output characteristics i d =f(v ds ); t jstart =25c parameter: v in 0 1 2 3 4 v 6 v ds 0 5 10 15 20 25 a 35 i d vin=3v 4v 5v 6v 10v 7v 8 off-state drain current i dss = f( t j ) -40 -15 10 35 60 85 110 135 c 185 t j 0 2 4 6 8 10 12 a 16 i dss typ. max.
2004-03-05 page 8 bsp 78 9 typ. overload current i d(lim) = f( t ) , v bb =12 v, no heatsink parameter: t jstart 0 0.5 1 1.5 2 2.5 3 ms 4 t 0 5 10 15 20 25 30 a 40 i d(lim) -40c 25c 85c 150c 10 typ. transient thermal impedance z thja =f( t p ) @ 6 cm 2 cooling area parameter: d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 3 s t p -3 10 -2 10 -1 10 0 10 1 10 2 10 k/w z thja single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 11 determination of i d(lim) i d(lim) = f( t ); t m = 200s parameter: t jstart 0 0.1 0.2 0.3 0.4 ms 0.6 t 0 5 10 15 20 25 30 a 40 i d(lim) -40c 25c 85c 150c
2004-03-05 page 9 bsp 78 package ordering code sot-223 q67060-s7203-a3 ?.1 ?.2 ?.1 0.7 4 3 2 1 gps05560 6.5 3 acc. to +0.2 din 6784 1.6 ?.1 15? max ?.04 0.28 7 ?.3 ?.2 3.5 0.5 0.1 max min b m 0.25 b a 2.3 4.6 a m 0.25
page 10 2004-03-05 bsp 78 revision history : 2004-03-05 previous version : 2003-04-22 for questions on technology, delivery and prices please contact the infineon technologies offices in germany or the infineon technologies companies and representatives worldwide: see our webpage at http://www.infineon.com hitfet ? , sipmos ? are registered trademarks of infineon technologies ag. edition 2004-02-02 published by infineon technologies ag, st.-martin-strasse 53, d-81541 mnchen, germany ? infineon technologies ag 2001 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies representatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. page subjects (major changes since last revision) 2, 4 footnote 2 extended to vin<0v, e tot and ? t jt 2, 3 footnote 5 implemented to p tot and i d(nom) 2 esd test condition changed from mil std 883d, methode 3015.7 and eos/esd assn. standard s5.1-1993 to jedec norm eia/jesd22-a114-b, section 4 2 humidity category classification changed from din 40040 value e to j-std-20-b value msl1 2 climatic category changed from din iec 68-1 to din en 60068-1 3 v in(th) test conditions from i d =0.7ma to i d =1.4ma
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